Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions Proceedings of the 2010 IEEE International Reliability Physics Symposium (IRPS) . pp. 841-845. ISSN 1541-7026
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/IRPS.2010.5488723
Abstract
We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called "week NPN action" and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of ~5X in failure threshold (IT2) and ~2X in ESD window without degrading its I/O performance.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 79719 |
| Deposited On: | 28 Jan 2012 11:58 |
| Last Modified: | 28 Jan 2012 11:58 |
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