Tailoring exchange bias in half-metallic La2/3Sr1/3MnO3 thin films for spin valve applications

Muduli, P. K. ; Budhani, R. C. (2009) Tailoring exchange bias in half-metallic La2/3Sr1/3MnO3 thin films for spin valve applications Applied Physics Letters, 94 (20). 20510_1-202510_3. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v94/i20/p2025...

Related URL: http://dx.doi.org/10.1063/1.3139770

Abstract

We have utilized the antiferromagnetic nature and structural/chemical compatibility of La0.45Sr0.55MnO3 with highly spin polarized La0.67Sr0.33MnO3 to prepare epitaxial exchange bias (EB) couples. A robust EB shift in magnetization hysteresis with associated interfacial exchange energy J ≈ 0.13 erg/cm2 at 10 K along with enhanced coercivity is reported. The EB effect was engineered to bring coercivity contrast between La0.67Sr0.33MnO3 and cobalt films in La0.45Sr0.55MnO3/La0.67Sr0.33MnO3/SrTiO3/Co magnetic tunnel junctions.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Antiferromagnetic Materials; Coercive Force; Lanthanum Compounds; Magnetic Hysteresis; Magnetic Tunnelling; Spin Polarised Transport; Spin Valves; Strontium Compounds
ID Code:77226
Deposited On:10 Jan 2012 15:12
Last Modified:18 May 2016 20:35

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