Amorphous silicon as a resist material

Gupta, P. K. ; Chopra, K. L. (1988) Amorphous silicon as a resist material Electron Device Letters, IEEE, 9 (1). pp. 17-19. ISSN 0741-3106

Full text not available from this repository.

Official URL:

Related URL:


Lithographic properties of amorphous silicon films exposed to glow-discharge hydrogen plasma and ion beams have been investigated. The rate of film etching by a CF4 plasma is lowered by exposure, giving rise to a negative resist behavior of the material. The sensitivity and contrast are ~1018 ions/cm2 and 1.1, respectively. The effect of exposure time on etching characteristics was also studied.

Item Type:Article
Source:Copyright of this article belongs to IEEE.
ID Code:76419
Deposited On:31 Dec 2011 14:44
Last Modified:31 Dec 2011 14:44

Repository Staff Only: item control page