a-Si:H/CuInS2 heterojunctions for photovoltaic conversion

Kumar, Satyendra ; Tiwari, A. N. ; Sastry, O. S. ; Pandya, D. K. ; Chopra, K. L. (1986) a-Si:H/CuInS2 heterojunctions for photovoltaic conversion Bulletin of Materials Science, 8 (3). pp. 285-289. ISSN 0250-4707

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Official URL: http://www.ias.ac.in/j_archive/bms/8/3/285-290/vie...

Related URL: http://dx.doi.org/10.1007/BF02744134


Heterojunctions of hydrogenated a-Si films prepared by r.f. sputtering with spraypyrolyzed CuInS2 films have been studied. Capacitance-voltage measurements establish the formation of abrupt heterojunction. The barrier height varies from 0.26 to 0.55 V as the resistivity of CuInS2 film decrease from 1.5×103 to 65 Ωm. These junctions exhibit photovoltaic behaviour with Voc=220 mV and Isc=0.20 mA/cm2.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Heterojunction; a-Si:H; CuInS2; Photovoltaics
ID Code:76417
Deposited On:31 Dec 2011 14:43
Last Modified:18 May 2016 20:04

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