Adsorption induced changes in the conductivity of amorphous Ge films

Pandya, D. K. ; Chopra, K. L. (1974) Adsorption induced changes in the conductivity of amorphous Ge films Japanese Journal of Applied Physics, 2 (Suppl. 2). pp. 157-160. ISSN 0021-4922

Full text not available from this repository.

Official URL:


In order to understand the considerable irreversible ageing, annealing and adsorption effects on the various physical properties of amorphous (a-) Ge films, the effect of adsorption of N2, O2, Ar and air on the transport properties of obliquely deposited a-Ge films has been studied. The resistivity increases parabolically with time for about 30 minutes and thereafter increases slowly. Similarly, the resistivity rises rapidly with increasing pressure, upto ~10-2 Torr. The largest effect is observed with oxygen. The resistivity changes are drastically enhanced with increasing angle of oblique deposition. The temperature dependence of the resistivity is qualitatively similar for films with and without adsorption effects. This paper will discuss the various observations and their interpretation in terms of adsorption induced microstructural rearrangement of anisotropic films.

Item Type:Article
Source:Copyright of this article belongs to The Japan Society of Applied Physics.
ID Code:76403
Deposited On:31 Dec 2011 14:40
Last Modified:31 Dec 2011 14:40

Repository Staff Only: item control page