Nayar, P. S. ; Verma, J. K. D. ; Nag, B. D. (1969) Conductivity, thermoelectric power, and valence-band structure of thallium selenide Journal of Applied Physics, 40 (1). pp. 123-126. ISSN 0021-8979
Full text not available from this repository.
Official URL: http://link.aip.org/link/doi/10.1063/1.1657015
Related URL: http://dx.doi.org/10.1063/1.1657015
Abstract
Electrical conductivity and thermoelectric power of lead-doped thallium selenide (TlSe) of various doping concentrations have been measured. It is found that the material always remains p type. At room temperature, thermoelectric power shows a maximum for a certain value of conductivity and thereafter decreases with increase of conductivity. A qualitative discussion of the applicability of the two-valence-band model is also presented.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 75384 |
| Deposited On: | 22 Dec 2011 13:18 |
| Last Modified: | 22 Dec 2011 13:18 |
Repository Staff Only: item control page
