Interfacial conduction in silica gels containing nanocrystalline copper oxide

Das, D. ; Chakravorty, D. (2000) Interfacial conduction in silica gels containing nanocrystalline copper oxide Applied Physics Letters, 76 (10). pp. 1273-1275. ISSN 0003-6951

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Official URL: http://apl.aip.org/applab/v76/i10/p1273_s1?isAutho...

Related URL: http://dx.doi.org/10.1063/1.126006

Abstract

Nanometer-sized copper particles have been grown within a gel derived glass in the system 60 CuO, 40SiO2(mole%). By heat treatment at temperatures in the range of 450-850°C, copper oxide shells of thickness varying from 1.1 to 1.7 nm have been produced. DC resistivity measurements carried out over the temperature range of 30-300°C show a drastically reduced activation energy as compared to that of a reference sample with the above composition. This is ascribed to the presence of an interfacial amorphous phase generated by the assembly of nanosized copper oxide particles.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:7255
Deposited On:25 Oct 2010 12:01
Last Modified:28 May 2011 04:40

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