Bhattacharya, Santanu ; Datta, A. ; Chakravorty, D. (2010) Multiferroic GaN nanofilms grown within Na-4 mica channels Applied Physics Letters, 96 (9). 093109_1-093109_3. ISSN 0003-6951
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Official URL: http://apl.aip.org/applab/v96/i9/p093109_s1?isAuth...
Related URL: http://dx.doi.org/10.1063/1.3340897
Abstract
Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 7249 |
| Deposited On: | 25 Oct 2010 12:03 |
| Last Modified: | 17 May 2011 11:03 |
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