Multiferroic GaN nanofilms grown within Na-4 mica channels

Bhattacharya, Santanu ; Datta, A. ; Chakravorty, D. (2010) Multiferroic GaN nanofilms grown within Na-4 mica channels Applied Physics Letters, 96 (9). 093109_1-093109_3. ISSN 0003-6951

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Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:7249
Deposited On:25 Oct 2010 12:03
Last Modified:17 May 2011 11:03

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