A novel Cu(II) chemical vapor deposition precursor: synthesis, characterization, and chemical vapor deposition

Devi, A. ; Goswami, J. ; Lakshmi, R. ; Shivashankar, S. A. ; Chandrasekaran, S. (1998) A novel Cu(II) chemical vapor deposition precursor: synthesis, characterization, and chemical vapor deposition Journal of Materials Research, 13 (3). pp. 687-692. ISSN 0884-2914

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Related URL: http://dx.doi.org/10.1557/JMR.1998.0086

Abstract

A nonfluorinated β-diketonate precursor, bis(t- butylacetoacetato)Cu(II) or Cu(tbaoac)2, was synthesized by modifying bis(dipivaloylmethanato)Cu(II) or Cu(dpm)2 for chemical vapor deposition (CVD) of copper. The complex was characterized by a variety of techniques, such as melting point determination, mass spectrometry, infrared spectroscopy, elemental analysis, thermogravimetric and differential thermal analysis, and x-ray diffraction. Cu(tbaoac)2 has a higher sublimation rate than Cu(dpm)2 over the temperature range 90- 150° C. Pyrolysis of Cu(tbaoac)2 leads to the formation of copper films at 225 °C, compared to 330 °C for Cu(dpm)2. As-deposited copper films were highly dense, mirror-bright, adhered strongly to SiO2, and showed a resistivity of less than 2.9 μΩ-cm at a thickness as low as 1300 Å. A possible mechanism for the decomposition of the ligand tbaoac has been proposed.

Item Type:Article
Source:Copyright of this article belongs to Materials Research Society.
Keywords:Metals; Thin Film; Chemical Vapor Deposition (CVD)
ID Code:7151
Deposited On:25 Oct 2010 12:28
Last Modified:16 May 2016 17:24

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