Anisotropic properties of the layered semiconductor InTe

Pal, S. ; Bose, D. N. ; Asokan, S. ; Gopal, E. S. R. (1991) Anisotropic properties of the layered semiconductor InTe Solid State Communications, 80 (9). pp. 753-756. ISSN 0038-1098

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Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μΠ=50-60 cm2V-1sec-1 and μ ⊥ = 10-15 cm2V-1sec-1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

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Deposited On:25 Nov 2011 12:59
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