Pal, S. ; Bose, D. N. ; Asokan, S. ; Gopal, E. S. R. (1991) Anisotropic properties of the layered semiconductor InTe Solid State Communications, 80 (9). pp. 753-756. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0038-1098(91)90902-8
Abstract
Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μΠ=50-60 cm2V-1sec-1 and μ ⊥ = 10-15 cm2V-1sec-1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 71144 |
| Deposited On: | 25 Nov 2011 12:59 |
| Last Modified: | 13 Jul 2012 13:31 |
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