Bhatia, K. L. ; Gosain, D. P. ; Parthasarathy, G. ; Gopal, E. S. R. (1986) On the structural features of doped amorphous chalcogenide semiconductors Journal of Non-Crystalline Solids, 86 (1-2). pp. 65-71. ISSN 0022-3093
Full text not available from this repository.
Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0022-3093(86)90475-8
Abstract
A study of Bi-doped amorphous (Ge42S58)100-xBix and Ge20S80-xBix has been carried out by differential thermal analysis (DTA) and X-ray diffraction methods so as to elucidate the impurity-induced modifications in the semiconductors. Thermal analysis reveals the presence of complex structural units in the modified material. An interesting feature of this study is the existence of a double glass transition in Ge20S80-xBix, which is reported for the first time in this system.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 71140 |
| Deposited On: | 25 Nov 2011 12:59 |
| Last Modified: | 25 Nov 2011 12:59 |
Repository Staff Only: item control page
