Parthasarathy, G. ; Bandyopadhyay, A. K. ; Asokan, S. ; Gopal, E. S. R. (1984) Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass Solid State Communications, 51 (4). pp. 195-197. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0038-1098(84)90994-3
Abstract
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 71136 |
| Deposited On: | 25 Nov 2011 12:58 |
| Last Modified: | 25 Nov 2011 12:58 |
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