Evidence for a new metastable crystalline compound in Ge-Te system

Asokan, S. ; Parthasarathy, G. ; Gopal, E. S. R. (1986) Evidence for a new metastable crystalline compound in Ge-Te system Materials Research Bulletin, 21 (2). pp. 217-224. ISSN 0025-5408

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Official URL: http://www.sciencedirect.com/science/article/pii/0...

Related URL: http://dx.doi.org/10.1016/0025-5408(86)90209-6


Pressure dependence of the electrical resistivity of bulk, melt quenched GexTe100-x glasses (15 ≤ x ≤ 28) has been studied up to 8GPa pressure. All the glasses exhibit a sharp, discontinuous glass to crystal transition under pressure. The high pressure crystalline phases are identified to have a face centered cubic structure. The value of the cell constant is 0.779nm for 15 ≤ x ≤ 17, 0.642nm for x=20 and 0.55lnm for 22 ≤ x ≤ 28 samples respectively. The cell constants of the high pressure crystalline phases suggest the possible existance of a new metastable crystalline compound in the Ge-Te system with F.C.C. structure and cell constant equal to 1.109nm as reported by Moore et al.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:GexTe100-x alloys; Amorphous semiconductors; chalcogenide glasses
ID Code:71134
Deposited On:25 Nov 2011 12:58
Last Modified:25 Nov 2011 12:58

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