Asokan, S. ; Parthasarathy, G. ; Subbanna, G. N. ; Gopal, E. S. R. (1986) Electrical transport and crystallization studies of glassy semiconducting Si20Te80 alloy at high pressure Journal of Physics and Chemistry of Solids, 47 (4). pp. 341-348. ISSN 0022-3697
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0022-3697(86)90023-5
Abstract
The effect of pressure on the electrical resistivity of bulk Si20Te80 glass is reported. Results of calorimetric, X-ray and transmission electron microscopy investigations at different stages of crystallization of bulk Si20Te80 glass are also presented. A pressure induced glass-to-crystal transition occurs at a pressure of 7 GPa. Pressure and temperature dependence of the electrical resistivity of Si20Te80 glass show the observed transition is a pressure induced glassy semiconductor to crystalline metal transition. The glass also exhibits a double Tg effect and double stage crystallization, under heating. The differences between the temperature induced crystallization (primary crystallization) and pressure induced congruent crystallization are discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | High Pressure Effects in Solids; Chalcogenide Glasses; Pressure Induced Transition; Crystallization of Glasses; Transport Properties |
| ID Code: | 71129 |
| Deposited On: | 25 Nov 2011 12:58 |
| Last Modified: | 25 Nov 2011 12:58 |
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