Impurity states in Sb-doped amorphous semiconductors

Gosain, D. P. ; Bhatia, K. L. ; Parthasarathy, G. ; Gopal, E. S. R. (1987) Impurity states in Sb-doped amorphous semiconductors Journal of Applied Physics, 62 (6). pp. 2313-2319. ISSN 0021-8979

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A Systematic investigation of the effects of antimony dopant on the electronic transport properties of amorphous (GeSe3.5)100-xSbx under high pressure (up to 120 kbar) has been carried out down to liquid-nitrogen temperature for the first time. Differential thermal analysis and x-ray diffraction methods were used for the characterization of freshly prepared and pressure-quenched materials which indicated the presence of structural phase transition in both GeSe3.5 and (GeSe3.5)100-xSbx around 105 kbar pressure. Electrical transport data revealed the strong compositional dependence of the electronic conduction process. A distinct kink in the conductivity temperature plot at pressures >15 kbar was observed in the Sb-doped compositions indicating the presence of different conduction processes. An attempt has been made to interpret the pressure-induced effect in the transport properties of these glasses considering the possible presence of both thermally activated conduction in the extended states and hopping process in the localized tail states. However, the interpretation of the transport data is not straightforward and the pressure dependence of the thermoelectric power will be needed to complete the picture.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Impurity States; Chemical Composition; Doped Materials; Pressure Effects; Germanium Selenides; Germanium Antiminides; Charged-Particle Transport
ID Code:71114
Deposited On:25 Nov 2011 12:59
Last Modified:25 Nov 2011 12:59

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