Ivanova, Z. G. ; Aneva, Z. ; Ganesan, R. ; Tonchev, D. ; Gopal, E. S. R. ; Rao, K. S. R. K. ; Allen, T. W. ; DeCorby, R. G. ; Kasap, S.O. (2007) Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorption Journal of Non-Crystalline Solids, 353 (13-15). pp. 1418-1421. ISSN 0022-3093
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.jnoncrysol.2006.10.066
Abstract
The photoluminescence (PL) of a series of (GeS2)80(Ga2S3)20 glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2 K has been studied. The influence of the temperature on the emission cross-section of the PL bands at ~1540, 980 and 820 nm under host excitation has been defined. A quenching effect of the host photoluminescence has been established from the compositional dependence of the PL intensity. It has been found that the present Er3+-doped Ge-S-Ga glasses posses PL lifetime values about 3.25 ms.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Amorphous Semiconductors; Chalcogenides; Luminescence; Rare-earths in Glasses |
| ID Code: | 71105 |
| Deposited On: | 24 Nov 2011 04:04 |
| Last Modified: | 24 Nov 2011 04:04 |
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