Rabina, M. K. ; Titus, S. S. K. ; Asokan, S. ; Gopal, E. S. R. ; Godzaev, M. O. ; Mamedov, N. T. (1993) Effect of high pressure on the electrical conductivity of TllnX2 (X = Se, Te) layered semiconductors Physica Status Solidi B, 178 (2). pp. 403-408. ISSN 0370-1972
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssb.22...
Related URL: http://dx.doi.org/10.1002/pssb.2221780217
Abstract
The dc electrical conductivity of TllnX2 (X = Se, Te) single crystals, parallel and perpendicular to the (001) c-axis is studied under high quasi-hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c-axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c-axis, d(ΔE‖)/dP = -2.9 × 10-10 eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons. |
| ID Code: | 71104 |
| Deposited On: | 24 Nov 2011 03:59 |
| Last Modified: | 24 Nov 2011 03:59 |
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