Pressure-induced structural transformations in Bi-doped amorphous germanium sulfide

Gosain, D. P. ; Bhatia, K. L. ; Parthasarathy, G. ; Gopal, E. S. R. (1985) Pressure-induced structural transformations in Bi-doped amorphous germanium sulfide Physical Review B: Condensed Matter and Materials Physics, 32 (4). pp. 2727-2730. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v32/i4/p2727_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.32.2727

Abstract

The problem of n-type doping of amorphous germanium chalcogenides is tackled by applying a Bridgman anvil technique of high pressure. A study of Bi-doped Ge20S80-xBix and (Ge42S58)100-xBix has been made up to a pressure of 100 kbar for the first time. The appearance of two pressure-induced sharp structural transitions in Ge20S80-xBix and one continuous transition in (Ge42S58)100-xBix is observed. X-ray diffraction and differential thermal analysis of semiconductors (as prepared and pressure quenched) reveal the presence of two pressure-induced crystalline phases Bi2S3 and GeS2. Such structural changes in the doped semiconductors may be the contributory factor in the n-type doping of the chalcogenide glass.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:71097
Deposited On:24 Nov 2011 03:50
Last Modified:24 Nov 2011 03:50

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