Bismuth-doped amorphous germanium sulfide semiconductors

Bhatia, K. L. ; Gosain, D. P. ; Parthasarathy, G. ; Gopal, E. S. R. (1986) Bismuth-doped amorphous germanium sulfide semiconductors Physical Review B: Condensed Matter and Materials Physics, 34 (12). pp. 8786-8793. ISSN 1098-0121

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A study of the effect of bismuth dopant on the electronic transport properties of the amorphous semiconductors Ge20S80-xBix under high pressure (up to 140 kbar) has been carried out down to liquid-nitrogen temperature. The experiments reveal that the electronic conduction is strongly composition dependent and is thermally activated with a single activation energy at all pressures and for all compositions. A remarkable resemblance between the electronic conduction process, x-ray diffraction studies, and differential thermal analysis results is revealed. It is proposed that the n-type conduction in germanium chalcogenides doped with a large Bi concentration is due to the effect of Bi dopants on the positive correlation energy defects present in germanium chalcogenides. The impurity-induced chemical modification of the network creates a favorable environment for such an interaction.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:71096
Deposited On:24 Nov 2011 03:50
Last Modified:24 Nov 2011 03:50

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