Prasad, M. V. N. ; Parthasarathy, G. ; Asokan, S. ; Gopal, E. S. R. (1984) Pressure-induced electronic and structural transformations in bulk GeSe2 glass Pramana - Journal of Physics, 23 (1). pp. 31-37. ISSN 0304-4289
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Official URL: http://www.ias.ac.in/j_archive/pramana/23/1/31-37/...
Related URL: http://dx.doi.org/10.1007/BF02846438
Abstract
The pressure dependence of the electrical resistivity of bulk GeSe2 glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using the x-ray diffractometer and is found to be crystalline, with a face-centred cubic structure having α = 4·06 A. The electrical conductivity has also been studied as a function of temperature at various pressures.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | High Pressure Effects on Solids; Semiconductor-to-metal Transition; Chalcogenide Glasses; Amorphous to Crystalline Transformations |
| ID Code: | 71076 |
| Deposited On: | 24 Nov 2011 03:50 |
| Last Modified: | 18 May 2016 16:57 |
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