Parthasarathy, G. ; Bandyopadhyay, A. K. ; Asokan, S. ; Gopal, E. S. R. (1984) Electrical transport and high pressure studies on bulk Ge20Te80 glass Pramana - Journal of Physics, 23 (1). pp. 17-29. ISSN 0304-4289
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Official URL: http://www.ias.ac.in/j_archive/pramana/23/1/17-29/...
Related URL: http://dx.doi.org/10.1007/BF02846437
Abstract
The electrical resistivity of bulk Ge20Te80 has been measured as a function of pressure and temperature. At 5 GPa, an amorphous semiconductor-to-crystalline metal transition has been observed. The sample recovered from the high pressure cell, after the application of 7 GPa, has a face-centred cubic structure with a lattice constant of 6·42 A. In crystalline sample, the semiconductor-to-metal transition occurs at 7 GPa. The thermoelectric power has also been measured for glassy samples in the temperature range 300-240 K.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | High Pressure Effects on Solids; Chalcogenide Glass; Semiconductor-to-metal Transition; Pressure-induced Crystallization |
| ID Code: | 71071 |
| Deposited On: | 24 Nov 2011 03:50 |
| Last Modified: | 18 May 2016 16:57 |
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