Asokan, S. ; Gopal, E. S. R. ; Parthasarathy, G. (1986) Pessure-induced polymorphous crystallization in bulk Si20Te80 glass Journal of Materials Science, 21 (2). pp. 625-629. ISSN 0022-2461
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Official URL: http://www.springerlink.com/content/v7h6090176652u...
Related URL: http://dx.doi.org/10.1007/BF01145533
Abstract
The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition at T = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Springer. |
| ID Code: | 71066 |
| Deposited On: | 24 Nov 2011 03:50 |
| Last Modified: | 24 Nov 2011 03:50 |
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