The electronic structure of point defects in semiconductor alloys: simplified approximations

Das, A. ; Singh, V. A. (1992) The electronic structure of point defects in semiconductor alloys: simplified approximations Journal of Physics: Condensed Matter, 4 (9). pp. 2209-2216. ISSN 0953-8984

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Official URL: http://iopscience.iop.org/0953-8984/4/9/014

Related URL: http://dx.doi.org/10.1088/0953-8984/4/9/014

Abstract

The authors present a simplified tight-binding-based coherent-potential approximation (CPA) formalism for the host electronic structure of semiconductor alloys (e.g. Ga1-xAlxAs). Several schemes to locate the gap level due to point defects are discussed. In particular, they introduce a novel scheme: the deep-level approximation. They also point out that the vacancy results in the CPA are identical with the simpler virtual-crystal approximation. They discuss their results by presenting numerical results in Ga1-xAlxAs and GaAs1-xSbx.

Item Type:Article
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ID Code:70465
Deposited On:21 Nov 2011 09:56
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