An X-ray diffraction study of silicon carbide structure types [(33)n34]3R

Krishna, P. ; Verma, Ajit Ram (1962) An X-ray diffraction study of silicon carbide structure types [(33)n34]3R Zeitschrift fÜr Kristallographie, 117 (1). pp. 1-15. ISSN 0044-2968

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A comparative study of the calculated relative intensities of 10.l reflections for the five members 21R, 39R, 57R, 75R and 111R of the silicon carbide structure series [(33)n34]3R (Zhdanov-Ramsdell notation) has been made. Characteristics of the intensity distribution in the 10.l row line, for the entire series of structures, have been derived, enabling a direct identification of higher members without undergoing tedious intensity calculations. A new polytype 111R has been discovered and is shown to have a structure [(33)534]3. The structure is confirmed by the excellent agreement between observed and calculated relative intensities of diffracted x-rays. The origin and growth of this series of structures is discussed.

Item Type:Article
Source:Copyright of this article belongs to Oldenbourg Wissenschaftsverlag GmbH.
ID Code:70032
Deposited On:19 Nov 2011 10:43
Last Modified:10 Dec 2011 08:32

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