Kumar, Ajay ; Malhotra, L. K. ; Chopra, K. L. (1988) Photon and electron beam induced chemical solubility changes in amorphous P-Ge-Se thin films Journal of Vacuum Science and Technology A, 6 (4). pp. 2431-2433. ISSN 0734-2101
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Official URL: http://link.aip.org/link/?JVTAD6/6/2431/1
Related URL: http://dx.doi.org/10.1116/1.575568
Abstract
The structural changes brought in by photon and electron beam exposure of P-Ge-Se thin films lead to large changes in the chemical solubility and, hence, have been exploited for resist applications. The chemical solubility difference can be increased by increasing the angle of deposition and is maximum at 80° . As-deposited films show a positive resist behavior, while by depositing a very thin Ag overlayer, a negative resist behavior can be obtained. Contrast and sensitivity (S) values of 2.5 and ˜1020 photons/cm2, respectively, for photons and 5 and 4× 10-4C/cm2 for electrons have been obtained.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to AVS (American Vacuum Society). |
| Keywords: | Surface Reactions; Phosphorus Selenides; Overlayers; Surface Structure; Amorphous Semiconductors; Photoresists; Germanium Selenides; Phosphorus Compounds; Thin Films; Physical Radiation Effects; Silver; Solubility; Solvent Properties; Electron Collisions; Photon Collisions; Sensitivity; Photosensitivity; Crystal Structure; Experimental Data; Chemistry; Interfaces; Amorphous State |
| ID Code: | 69132 |
| Deposited On: | 08 Nov 2011 11:09 |
| Last Modified: | 08 Nov 2011 11:09 |
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