Negative resist behavior of obliquely deposited Ge-Sb-Se thin films

Kumar, Ajay ; Malhotra, L. K. ; Chopra, K. L. (1987) Negative resist behavior of obliquely deposited Ge-Sb-Se thin films Journal of Vacuum Science and Technology A, 5 (3). pp. 354-357. ISSN 0734-2101

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The photon and electron-beam induced changes in the selective solubility of Ge-Se-Sb films have been investigated to show that these films can be used as a negative resist. The formation of Sb2Se3 on the top of the film surface after exposure, as confirmed by x-ray diffraction and x-ray photoelectron spectroscopy studies, gives rise to a negative tone behavior. The addition of 10 at. % of Sb in the GeSe3 films saturates the change in the chemical solubility after photo- and electron-beam exposures. The chemical solubility difference can be increased by increasing the angle of deposition and is maximum at 80°. Contrast (γ) and sensitivity (s) values of 2.85 and ˜1020 photons/cm2, respectively, for photons, and 4.2 and 6× 10-5 C/cm2 for electrons have been obtained.

Item Type:Article
Source:Copyright of this article belongs to AVS (American Vacuum Society).
Keywords:Germanium; Selenium; Antimony; Metallic Glasses; Photoresists; Surface Treatments; Solubility; Crystal Structure; X-ray Diffraction; Electron Collisions; Etching
ID Code:69126
Deposited On:08 Nov 2011 11:09
Last Modified:08 Nov 2011 11:09

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