Structural and optical properties of solution grown CdSe1-xSx films

Kainthla, R. C. ; Pandya, D. K. ; Chopra, K. L. (1982) Structural and optical properties of solution grown CdSe1-xSx films The Electrochemical Society, 129 (1). pp. 99-102. ISSN 0013-4651

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CdSe1-xSx films have been prepared in the entire composition range from CdSe to CdS by using a chemical solution growth technique. Optimum conditionsto deposit good quality films have been determined. Structural and opticalproperties of the films have been studied. Electron diffraction analysis showsthat the films have predominantly cubic (sphalerite) structure. The lattice parametervaries continuously from 5.81Å for CdS to 6.06Å for CdSe films. Thefilms have a direct bandgap, which varies continuously from 2.44 eV for CdS to 1.74 eV for CdSe films.

Item Type:Article
Source:Copyright of this article belongs to The Electrochemical Society.
Keywords:II-VI Semiconductors; Semiconductor Thin Films; Liquid Phase Deposition; Ternary Semiconductors; Crystal Structure; Lattice Constants; Absorption Coefficients; Visible Spectra; Energy Gap
ID Code:69110
Deposited On:08 Nov 2011 10:43
Last Modified:08 Nov 2011 10:43

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