Upper critical field studies on Sc5-xDyxIr4Si10 system

Ghosh, K. ; Ramakrishnan, S. ; Nigam, A. K. ; Chandra, Girish (1993) Upper critical field studies on Sc5-xDyxIr4Si10 system Journal of Applied Physics, 73 (10). pp. 6637-6638. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v73/i10/p6637...

Related URL: http://dx.doi.org/10.1063/1.352538

Abstract

In this paper we report the upper critical field studies of Sc5-xDyxIr4Si10 (for x=0, 1, 1.5, and 1.75). Analysis of upper critical magnetic fields yields Hc2(0) of 10 and 8.2 kOe for the superconducting samples Sc5Ir4Si10 and Sc4Dy1Ir4Si10, respectively. We obtain the lower values of Hc2(0) of 1.0 and 0.8 kOe for Sc3.5Dy1.5Ir4Si10 and Sc3.25Dy1.75Ir4Si10, respectively, where the coexistence of antiferromagnetism and superconductivity are observed from the measurements of ac susceptibility and resistivity in the presence of dc magnetic field.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Superconductors; Ternary Compounds; Quaternary Compounds; Scandium Silicides; Dysprosium Silicides; Iridium Silicides; Critical Field; Antiferromagnetism; Magnetic Susceptibility; Electric Conductivity
ID Code:68506
Deposited On:02 Nov 2011 11:19
Last Modified:02 Nov 2011 11:19

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