Pal, A. J. ; Paloheimo, J. ; Stubb, H. (1996) Light-emitting diodes using quinquethiophene Langmuir-Blodgett films: effect of electron-transporting layers Thin Solid Films, 284-285 . pp. 489-491. ISSN 0040-6090
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/S0040-6090(95)08373-1
Abstract
Langmuir-Blodgett (LB) films of quinquethiophene have been used as active emitting layers to fabricate light-emitting diodes. Green electroluminescence was visible in a dark room. The effect of the thickness of the film on the electroluminescence efficiency has been investigated. Even 5 LB layers have been shown to yield the same luminance as thicker films. Additional LB films of electron-transporting material have been used to increase the quantum efficiency, which has also resulted in a lower "turn-on" current for the device. The electroluminescence spectrum showed a profile identical to the photoluminescence spectrum of quinquethiophene.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Electroluminescence; Langmuir-Blodgett Films; Light-emitting Diodes; Molecular Electronic Devices |
| ID Code: | 65741 |
| Deposited On: | 18 Oct 2011 08:55 |
| Last Modified: | 18 Oct 2011 08:55 |
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