Metal-semiconductor nanojunctions and their rectification characteristics

Bose, Anindita ; Chatterjee, Kuntal ; Chakravorty, Dipankar (2009) Metal-semiconductor nanojunctions and their rectification characteristics Bulletin of Materials Science, 32 (3). pp. 227-230. ISSN 0250-4707

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Junctions of silver-copper oxide and silver-zinc oxide, respectively were prepared within the pores of diameters, 20 nm, in anodic aluminium oxide membranes. Voltage-current characteristics were measured over the temperature range 373-573 K which showed rectification behaviour. Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure generated as a result of thermal expansion of the metallic phases concerned between the electrodes. This is consistent with the theoretical prediction of Fermi level shifting of the semiconductor within the bandgap as a function of pressure.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Metal-semiconductor Nanojunctions; Rectification Characteristics; Nanostructure Systems; Single-walled Carbon Nanotubes
ID Code:65689
Deposited On:17 Oct 2011 10:39
Last Modified:18 May 2016 13:34

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