A bit per particle: electrostatic assembly of CdSe quantum dots as memory elements

Das, B. C. ; Batabyal, S. K. ; Pal, A. J. (2007) A bit per particle: electrostatic assembly of CdSe quantum dots as memory elements Advanced Materials, 19 (23). pp. 4172-4176. ISSN 0935-9648

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/adma.20...

Related URL: http://dx.doi.org/10.1002/adma.200700309

Abstract

Two-dimensional arrays of CdSe nanoparticles are fabricated via electrostatic assembly. The size of the particles ranges down to the quantum dot regime. Individual particles and arrays of particles exhibit electrical bistability and associated memory phenomenon. The bistability, which is due to charge confinement in the particles, results in experimental evidence of quantum dots as memory elements storing a bit per particle.

Item Type:Article
Source:Copyright of this article belongs to John Wiley and Sons.
Keywords:Layer-by-layer Assembly; Nanoparticles; Quantum Dots; Semiconductors
ID Code:65656
Deposited On:17 Oct 2011 10:50
Last Modified:17 Oct 2011 10:50

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