Multilevel conductance and memory in ultrathin organic films

Mukherjee, Biswanath ; Pal, Amlan J. (2004) Multilevel conductance and memory in ultrathin organic films Applied Physics Letters, 85 (11). pp. 2116-2118. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v85/i11/p2116...

Related URL: http://dx.doi.org/10.1063/1.1794859

Abstract

The present letter reports conductance switching in Langmuir-Blodgett films of an organic semiconductor. We have achieved multiple conducting levels in devices based on ultrathin films for increased density of memory bits in the same space. We have shown that multiple conducting levels in a device can be achieved by controlling the density of high-conducting molecules in the structures. We have observed one low- and three high-conducting states of the devices. All four states have associated memory for data-storage applications. Any of the four states, namely 00, 01, 10, and 11, can be "read" for several hours for read-only memory applications. We could "erase" a state, "write" another, and "read" the state for multibit random-access-memory applications.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Semiconductor Storage; Electrical Conductivity Transitions; Langmuir-Blodgett Films; Organic Semiconductors; Semiconductor Thin Films
ID Code:65649
Deposited On:17 Oct 2011 10:46
Last Modified:17 Oct 2011 10:46

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