Semiconductor to metal transition in PbS nanowires grown in mica channels

Mukherjee, P. K. ; Chatterjee, K. ; Chakravorty, D. (2006) Semiconductor to metal transition in PbS nanowires grown in mica channels Physical Review B: Condensed Matter and Materials Physics, 73 (3). 035414_1-035414_5. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v73/i3/e035414

Related URL: http://dx.doi.org/10.1103/PhysRevB.73.035414

Abstract

It has been possible to grow PbS nanowires of diameter 1.2 nm within the crystal channels of Na-4 Mica. These nanowires exhibit a semiconductor to metal transition at ~300 K as the temperature is lowered. Generation of pressure around 3 GPa on these wires due to a thermal expansion mismatch of Na-4 Mica and PbS phases is believed to cause this transition. A nonlinear voltage current characteristics at different temperatures is ascribed to the formation of nanojunctions between the metallic phases and not transformed PbS regions. The semiconductor-metal transition at 300 K is accompanied by a transition from a low to a high dielectric constant. The large value of dielectric constant shown by the nanocomposites is explained as arising due to the Rice-Bernasconi mechanism of dielectric polarizability in broken one-dimensional conductors.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:65262
Deposited On:17 Oct 2011 03:36
Last Modified:17 Oct 2011 03:36

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