Band-structure trend in hole-doped cuprates and correlation with Tcmax

Pavarini, E. ; Dasgupta, I. ; Saha-Dasgupta, T. ; Jepsen, O. ; Andersen, O. K. (2001) Band-structure trend in hole-doped cuprates and correlation with Tcmax Physical Review Letters, 87 (4). 047003_1-047003_4. ISSN 0031-9007

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Official URL: http://prl.aps.org/abstract/PRL/v87/i4/e047003

Related URL: http://dx.doi.org/10.1103/PhysRevLett.87.047003

Abstract

By calculation and analysis of the bare conduction bands in a large number of hole-doped high-temperature superconductors, we have identified the range of the intralayer hopping as the essential, material-dependent parameter. It is controlled by the energy of the axial orbital, a hybrid between Cu4s, apical-oxygen 2pz, and farther orbitals. Materials with higher Tcmax have larger hopping ranges and axial orbitals more localized in the CuO2 layers.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:65126
Deposited On:15 Oct 2011 11:52
Last Modified:15 Oct 2011 11:52

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