Electronic structure of La2CuO4 in the T and T' crystal structures using dynamical mean field theory

Das, Hena ; Saha-Dasgupta, Tanusri (2009) Electronic structure of La2CuO4 in the T and T' crystal structures using dynamical mean field theory Physical Review B: Condensed Matter and Materials Physics, 79 (13). 134522_1-134522_5. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v79/i13/e134522

Related URL: http://dx.doi.org/10.1103/PhysRevB.79.134522

Abstract

Using Nth order muffin-tin-orbital-based downfolding technique in combination with dynamical mean field theory, we investigate the correlated electronic structure of La2CuO4 in the so-called "T" and "T'" crystal structure which serve as the parent compounds for the hole-doped and electron-doped high Tc compounds. La2CuO4, which naturally forms in T structure, has been reported to made to form in T' structure by means of special thin-film synthesis technique of replacing La by isovalent RE (RE=Y,Lu,Sm,Gd...) ions [ A. Tsukada et al. Solid State Commun. 133 427 (2005)]. The experimental studies on T'-structured La2CuO4 reveal contrasting properties to that in T structure, which we examine by means of electronic structure calculations. Our dynamical mean field calculations show introduction of correlation effect to the one-electron band structure of T'- and T-structured La2CuO4, providing metallic solution in one case (T') and insulating solution to another (T).

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:65082
Deposited On:15 Oct 2011 12:00
Last Modified:15 Oct 2011 12:00

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