Effects of chemical pressure on the Fermi surface and band dispersion of the electron-doped high-Tc superconductors

Ikeda, M. ; Yoshida, T. ; Fujimori, A. ; Kubota, M. ; Ono, K. ; Das, Hena ; Saha-Dasgupta, T. ; Unozawa, K. ; Kaga, Y. ; Sasagawa, T. ; Takagi, H. (2009) Effects of chemical pressure on the Fermi surface and band dispersion of the electron-doped high-Tc superconductors Physical Review B: Condensed Matter and Materials Physics, 80 (1). 014510_1-014510_6. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v80/i1/e014510

Related URL: http://dx.doi.org/10.1103/PhysRevB.80.014510

Abstract

We have performed angle-resolved photoemission spectroscopy measurements and first-principles electronic-structure calculations on the electron-doped high-Tc superconductors (HTSCs) Ln1.85Ce0.15CuO4 (Ln=Nd, Sm, and Eu). The observed Fermi surface and band dispersion show such changes that with decreasing ionic size of Ln3+ (increasing chemical pressure), the curvature of the Fermi surface or -t'/t decreases, where t and t' are transfer integrals between the nearest-neighbor and next-nearest-neighbor Cu sites, respectively, explaining the apparently inconsistent behavior seen in the hole-doped HTSC La2-xSrxCuO4 under epitaxial strain. Around the node, the antiferromagnetic gap is opened with increasing chemical pressure. We propose that the nodal gap opening is possibly due to the decrease in -t'/t through the improved nesting, leading to the decrease in Tc.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:65080
Deposited On:15 Oct 2011 12:00
Last Modified:15 Oct 2011 12:00

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