Electrical conduction in sol-gel derived glass-metal nanocomposites

Abstract

Glass-metal nanocomposites involving iron, nickel and copper in a silica glass matrix have been prepared as films on glass substrates by the sol-gel route. The metal phase is introduced as chloride and silicon tetraethoxide is used as the glass precursor. DC electrical resistivity of these nanocomposites has been measured over the temperature range 100 to 350 K. Resistivities varying from 10 Ω m to 10⁶ Ω m have been obtained by controlling the volume fraction of the different metal phases within the silica glass. Low-temperature resistivities of the samples are controlled by a simple activation with energies in the range 0.01-0.1 eV. At temperatures above 150 K some of the nanocomposites exhibit another activated mechanism. The latter is believed to arise due to hopping of electrons between the localised states formed by the distributed metal atoms within the silica glass matrix.