Chakravorty, D. ; Bandyopadhyay, A. K. ; Nagesh, V. K. (1977) Electrical properties of oxide glasses containing bismuth and selenium granules Journal of Physics D: Applied Physics, 10 (15). pp. 2077-2087. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/0022-3727/10/15/011
Related URL: http://dx.doi.org/10.1088/0022-3727/10/15/011
DC and AC resistivities of some oxide glasses containing either Bi2O3 or selenium have been measured over a temperature range of -160°C to 500°C. The microstructure of bismuth-containing glasses consists of spherical metallic bismuth particles having diameters in the range 50 to 500 AA dispersed in a glass matrix. In the selenium containing glasses selenium crystals of dimensions varying between 50 and 2000 AA are present. The DC resistivity data at temperatures below 120°C indicate that a tunnelling mechanism of charge carriers between the conducting granules is operative. The dielectric relaxation spectra of bismuth-containing glasses confirm this model of electron transport. The surface layers of the ion-exchanged and reduced samples of the selenium-containing glasses show a threshold switching from a low-resistance to a high-resistance state.
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