Chakravorty, D. ; Murthy, C. S. (1975) Memory switching in films of oxide glasses containing bismuth Journal of Physics D: Applied Physics, 8 (13). L162-L165. ISSN 0022-3727
Full text not available from this repository.
Official URL: http://iopscience.iop.org/0022-3727/8/13/004
Related URL: http://dx.doi.org/10.1088/0022-3727/8/13/004
Abstract
Negative resistance and memory switching effects have been observed in Na2O-B2O3-Bi2O3-SiO2 glass films of thicknesses between 2 and 14 mu m. The off-state resistance could possibly arise due to electron hopping between conducting islands of bismuth. The on-state characteristics suggest that the memory action might be due to the formation of metallic filaments between the bismuth particles.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 64881 |
| Deposited On: | 14 Oct 2011 12:12 |
| Last Modified: | 14 Oct 2011 12:12 |
Repository Staff Only: item control page
