Ding, S. A. ; Barman, S. R. ; Horn, K. ; Yang, H. ; Yang, B. ; Brandt, O. ; Ploog, K. (1997) Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy Applied Physics Letters, 70 (18). pp. 2407-2409. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://apl.aip.org/resource/1/applab/v70/i18/p2407...
Related URL: http://dx.doi.org/10.1063/1.118886
Abstract
The valence band discontinuity of the n-type cubic GaN/GaAs heterojunction is measured by means of angle-resolved photoemission spectroscopy using synchrotron radiation. High quality cubic GaN films are grown on GaAs(100) substrates by nitrogen plasma-assisted molecular beam epitaxy, and the valence band discontinuity is determined by a combination of core and valence level spectra. A value of ΔEV=(1.84±0.1) eV across the GaN/GaAs heterojunction is obtained, which means that the discontinuity in the conduction bands at this interface is very small, such that a vertical contact scheme may be realized for GaN/GaAs heterojunctions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Compounds; Gallium Arsenide; III-V Semiconductors; Semiconductor Heterojunctions; Valence Bands; Photoelectron Spectra; Semiconductor Epitaxial Layers; Core Levels; Interface States; Wide Band Gap Semiconductors |
| ID Code: | 64567 |
| Deposited On: | 12 Oct 2011 05:04 |
| Last Modified: | 12 Oct 2011 05:04 |
Repository Staff Only: item control page
