Ba3ZnTa2−xNbxO9 and Ba3MgTa2−xNbxO9 (0≤x ≤1): synthesis, structure and dielectric properties

Thirumal, M. ; Jawahar, I. N. ; Surendiran, K. P. ; Mohanan, P. ; Ganguli, A. K. (2002) Ba3ZnTa2−xNbxO9 and Ba3MgTa2−xNbxO9 (0≤x ≤1): synthesis, structure and dielectric properties Materials Research Bulletin, 37 (14). pp. 2321-2334. ISSN 0025-5408

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Oxides belonging to the families Ba3ZnTa2−xNbxO9 and Ba3MgTa2−xNbxO9 were synthesized by the solid state reaction route. Sintering temperatures of 1300°C led to oxides with disordered (cubic) perovskite structure. However, on sintering at 1425°C hexagonally ordered structures were obtained for Ba3MgTa2−xNbxO9 over the entire range (0≤x≤1) of composition, while for Ba3ZnTa2−xNbxO9 the ordered structure exists in a limited range (0≤x≤0.5). The dielectric constant is close to 30 for the Ba3ZnTa2−xNbxO9 family of oxides while the Mg analogues have lower dielectric constant of ~18 in the range 50 Hz to 500 kHz. At microwave frequencies (5-7 GHz) dielectric constant increases with increase in niobium concentration (22-26) for Ba3ZnTa2−xNbxO9; for Ba3MgTa2−xNbxO9 it varies between 12 and 14. The "Zn" compounds have much higher quality factors and lower temperature coefficient of resonant frequency compared to the "Mg" analogues.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Oxides; B. Chemical Synthesis; C. X-ray Diffraction; D. Dielectric Properties
ID Code:62045
Deposited On:16 Sep 2011 03:49
Last Modified:16 Sep 2011 03:49

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