Garg, G. ; Bobev, S. ; Roy, A. ; Ghose, J. ; Das, D. ; Ganguli, A. K. (2001) A new silicon-doped cation-deficient thiospinel, Cu5.52(8)Si1.04(8) □1.44Fe4Sn12S32: crystal structure, mössbauer studies, and electrical properties Journal of Solid State Chemistry, 161 (2). pp. 327-331. ISSN 0022-4596
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1006/jssc.2001.9321
Abstract
Starting from pure metals and sulfur in evacuated silica tubes, single crystals of Cu5.52(8)Si1.04(8)□1.44Fe4Sn12S32 have been obtained by quenching from 680°C. The above cation-deficient thiospinel crystallizes in the Fd3̅ m space group with a=10.3322(6) Å. Si doping leads to additional vacancies in the copper site. 119Sn Mössbauer data show the presence of Sn in II as well as IV oxidation states and all the Sn is present in the octahedral 16d sites. 57Fe Mössbauer studies show Fe to be present in the octahedral sites in both II and III oxidation states. The above thiospinel shows semiconducting behavior with resistivity of ~1×102 Ω-cm at room temperature and a small band gap of ~0.1 eV.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Mössbauer Spectroscopy; Thiospinels; Electrode Material; Crystal Structure; Electrical Transport |
| ID Code: | 62006 |
| Deposited On: | 16 Sep 2011 03:47 |
| Last Modified: | 16 Sep 2011 03:47 |
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