Electrical resistance anomalies in the antiferromagnetic state of ternary Pr compounds

Das, I. ; Sampathkumaran, E. V. ; Vijayaraghavan, R. (1992) Electrical resistance anomalies in the antiferromagnetic state of ternary Pr compounds Journal of Magnetism and Magnetic Materials, 104-107 . pp. 874-876. ISSN 0304-8853

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Official URL: http://www.sciencedirect.com/science/article/pii/0...

Related URL: http://dx.doi.org/10.1016/0304-8853(92)90402-A

Abstract

The electrical resistivity of PrCu2Si2 exhibits a marginal increase at the antiferromagnetic transition of Pr ions and we attribute this rise to the formation of an energy gap at the Fermi surface due to this transition. The influence of the variations in the conduction electron density, unit-cell volume or Pr concentration on this feature is reported.

Item Type:Article
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ID Code:61817
Deposited On:15 Sep 2011 11:52
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