Balasubramanian, S. ; Gopinath, C. S. ; Subramanian, S. ; Balasubramanian, N. (1994) Exposure of InP to hydrogen plasma in the presence of a 'sacrificial' InP-an X-ray photoelectron spectroscopic study Semiconductor Science and Technology, 9 (9). pp. 1604-1607. ISSN 0268-1242
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Official URL: http://iopscience.iop.org/0268-1242/9/9/006/
Related URL: http://dx.doi.org/10.1088/0268-1242/9/9/006
Abstract
X-ray photoelectron spectroscopic (XPS) studies of InP surfaces subjected to a new method of hydrogen plasma treatment are reported here. The XPS analysis shows that the usually observed phosphorus loss can be reduced by the use of a 'sacrificial' InP immersed in the hydrogen plasma with the test InP sample kept away from the electrodes in the downstream. The results suggest that the 'sacrificial' InP loses P during the H plasma exposure and thus becomes a source of P to compensate for the loss suffered by the test InP kept downstream.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 61762 |
| Deposited On: | 15 Sep 2011 12:04 |
| Last Modified: | 15 Sep 2011 12:04 |
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