Anomalies of resistivity and its T3 -dependence at low temperatures in Eu-based valence fluctuating systems

Patil, Sujata ; Nagarajan, R. ; Gupta, L. C. ; Padalia, B. D. ; Vijayaraghavan, R. (1990) Anomalies of resistivity and its T3 -dependence at low temperatures in Eu-based valence fluctuating systems Solid State Communications, 76 (10). pp. 1173-1176. ISSN 0038-1098

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Official URL: http://www.sciencedirect.com/science/article/pii/0...

Related URL: http://dx.doi.org/10.1016/0038-1098(90)90055-G

Abstract

Ce-based valence fluctuating systems, in general, are known to exhibit anomalous temperature dependence of resistivity, ϱ(T). In contrast, resistivity measurements have been reported thus far on only two Eu-based valence fluctuating (VF) systems and therefore further investigations are required on such materials. Here we report the results of our measurements of the temperature dependence of the resistance R(T) of three Eu-based VF-systems, viz., EuIr2Si2, Eu2Ni3Si5 and EuNiSi2. The measurements of R(T) have also been carried out in Eu2Au3Si5 and EuNi2Si2, where Eu is divalent and trivalent respectively. These studies reveal an anomalous behaviour of R(T) in the above-mentioned Eu-based VF-systems.

Item Type:Article
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Deposited On:15 Sep 2011 11:51
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