Chini, T. K. ; Datta, D. ; Bhattacharyya, S. R. ; Sanyal, M. K. (2001) Nanostructuring with a high current isotope separator and ion implanter Applied Surface Science, 182 (3-4). pp. 313-320. ISSN 0169-4332
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/S0169-4332(01)00420-2
Abstract
The oblique angle Ar bombardment with a high current isotope separator and ion implanter gives rise to nanoscale (400-900 nm) ripple formation on Si(1 0 0) at 80 and 100 keV for the dose of 1018 ions/cm2. The most important aspect of our preliminary investigation regarding the beam influencec on ripple wavelength indicates that the meaningful data comparable to the theoretical models can be obtained with homogeneous irradiation via beam sweeping. At 60 keV, Ar bombarded GaAs surface also shows nanoparticle decorated ripples for the dose of 5×1017 ions/cm2 and at higher dose ripples without nanoparticles.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Ar Bombardment; Nanoparticles; Ion Implanter |
| ID Code: | 61354 |
| Deposited On: | 15 Sep 2011 03:44 |
| Last Modified: | 15 Sep 2011 03:44 |
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