Basu, J. K. ; Hazra, S. ; Sanyal, M. K. (1999) Growth mechanism of Langmuir-Blodgett films Physical Review Letters, 82 (23). pp. 4675-4678. ISSN 0031-9007
![[img]](http://repository.ias.ac.in/style/images/fileicons/application_pdf.png)
|
PDF
- Publisher Version
355kB |
Official URL: http://prl.aps.org/abstract/PRL/v82/i23/p4675_1
Related URL: http://dx.doi.org/10.1103/PhysRevLett.82.4675
Abstract
Langmuir-Blodgett (LB) deposition is an astonishingly simple technique to grow well-ordered correlated metal-organic multilayers. To understand this growth mechanism, we have performed X-ray scattering and atomic force microscopic (AFM) studies on cadmium arachidate LB films exhibiting self-affine and logarithmic in-plane correlation at the interfaces. Using linear stochastic theory for interface evolution, it is proposed that a 1D deposition followed by a 2D desorption process is the growth mechanism of LB films. X-ray and AFM measurements confirm the crossover between these two growth regimes.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 61331 |
| Deposited On: | 15 Sep 2011 03:44 |
| Last Modified: | 18 May 2016 11:05 |
Repository Staff Only: item control page
