Ripple structure of crystalline layers in ion-beam-induced Si wafers

Hazra, S. ; Chini, T. K. ; Sanyal, M. K. ; Grenzer, J. ; Pietsch, U. (2004) Ripple structure of crystalline layers in ion-beam-induced Si wafers Physical Review B: Condensed Matter and Materials Physics, 70 (12). 121307_1-121307_4. ISSN 1098-0121

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Ion-beam-induced ripple formation in Si wafers was studied by two complementary surface sensitive techniques, namely atomic force microscopy (AFM) and depth-resolved X-ray grazing incidence diffraction (GID). The formation of ripple structure at high doses (~7×1017 ions/cm2), starting from initiation at low doses (~1×1017 ions/cm2) of ion beam, is evident from AFM, while that in the buried crystalline region below a partially crystalline top layer is evident from GID study. Such ripple structure of crystalline layers in a large area formed in the subsurface region of Si wafers is probed through a nondestructive technique. The GID technique reveals that these periodically modulated wavelike buried crystalline features become highly regular and strongly correlated as one increases the Ar ion-beam energy from 60 to 100 keV. The vertical density profile obtained from the analysis of a Vineyard profile shows that the density in the upper top part of ripples is decreased to about 15% of the crystalline density. The partially crystalline top layer at low dose transforms to a completely amorphous layer for high doses, and the top morphology was found to be conformal with the underlying crystalline ripple.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:61325
Deposited On:15 Sep 2011 03:46
Last Modified:18 May 2016 11:05

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