Theoretical performance of wurtzite and zincblende InGaN/GaN quantum well lasers

Radtke, R. J. ; Waghmare, U. ; Ehrenreich, H. ; Grein, C. H. (1998) Theoretical performance of wurtzite and zincblende InGaN/GaN quantum well lasers Applied Physics Letters, 73 (15). pp. 2087-2089. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v73/i15/p2087...

Related URL: http://dx.doi.org/10.1063/1.122386

Abstract

The theoretical gain, radiative and Auger recombination rates, and threshold current densities of ideal wurtzite (WZ) and zincblende (ZB) 20ÅIn0.2Ga0.8N/70Å GaN multiple quantum well laser diodes are compared. We obtain upper bounds on device performance, which are based on reliable calculations for both band structure and recombination dependent features and show (1) that the performance of present devices having the ZB and WZ structures are within 20% of each other in InGaN/GaN, and (2) that present performance of the best currently available devices is only a factor of 3-4 below the theoretical limit. Radiative recombination is far more important than Auger processes. The calculations are performed using a superlattice K⋅p formalism and density functional theory within the local-density approximation. The latter yields bulk zone-center energies, wave functions, and directly calculated momentum matrix elements.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Quantum Well Lasers; III-V Semiconductors; Gallium Compounds; Indium Compounds; Nitrogen Compounds; Electron-hole Recombination; Auger Effect; Current Density; Band Structure; Radiative Lifetimes
ID Code:59428
Deposited On:06 Sep 2011 05:18
Last Modified:06 Sep 2011 05:18

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