Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In2O3

Gupta, Amita ; Cao, Hongtao ; Parekh, Kinnari ; Rao, K. V. ; Raju, A. R. ; Waghmare, Umesh V. (2007) Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In2O3 Journal of Applied Physics, 101 (9). 09N513_1-09N513_3. ISSN 0021-8979

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Indium oxide is chosen as the host material for doping Ti, V, and Cr transition metal ions. Theoretical calculations based on density functional theory within a local spin density approximation show that V-V separation of 5.6 Å is more stable with a strong ferromagnetic coupling. Our calculations clearly predict that substitution of vanadium for indium should yield ferromagnetism in In2O3. Experimentally, (In0.95TM0.05)O3 (TM = Ti,V,Cr) were prepared using sol-gel as well as solid state reaction methods. Superconducting quantum interference device magnetization measurements as a function of field and temperature clearly showed that the V and Cr doped samples are ferromagnetic with Curie temperature well above room temperature. Thin films deposited by pulsed laser ablation using these materials on sapphire substrates exhibit a preferred 222 orientation normal to the plane of the film. The magnetic moment for (In0.95V0.05)O3 film deposited in 0.1 mbar oxygen pressure was estimated to be 1.7μB/V and is comparable to the theoretical value of 2μB/V.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Ferromagnetic Materials; Indium Compounds; Density Functional Theory; Curie Temperature; Vanadium; Chromium; Titanium; Semiconductor Thin Films; Texture; Magnetic Moments; Pulsed Laser Deposition; Magnetic Hysteresis; Magnetic Semiconductors; Magnetic Thin Films
ID Code:59393
Deposited On:06 Sep 2011 05:30
Last Modified:06 Sep 2011 05:30

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